Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma
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DOI: 10.1016/j.tsf.2019.05.066
Abstract: Abstract In this study, we investigated the etching characteristics of non-stoichiometric SiNx thin films in C4F8 + Ar inductively coupled rf (13.56 MHz) plasma. The SiNx etching rates together with SiNx/Si and SiNx/SiO2 etching selectivities were measured as… read more here.
Keywords: thin films; films c4f8; chemistry; sinx thin ... See more keywords