Effect of La, Zr, co-doping on electrical properties of La-Zr-ZnO/n-Si(111) Schottky heterojunctions
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DOI: 10.1016/j.elspec.2019.146895
Abstract: Abstract The La-Zr-ZnO/n-Si(111) schottky heterojunction was prepared by sol-gel method. The results showed that the average grain size of La-Zr-ZnO films decreases by increasing Zr ion doping concentration. Based on XPS analysis, it is found… read more here.
Keywords: films decreases; zno 111; ion doping; zno films ... See more keywords