Growth of high quality (In,Ga)N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy
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DOI: 10.1063/5.0012854
Abstract: Epitaxial growth of (In,Ga)N films on O-face ZnO substrates was studied via plasma-assisted molecular beam epitaxy. Atomically smooth GaN films, showing step edges, were grown at low temperatures to suppress the interfacial reaction between nitrides… read more here.
Keywords: assisted molecular; plasma assisted; films face; zno substrates ... See more keywords