A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.124
Abstract: Abstract We report a simple thermal treatment method for direct growth of InAsSb films on GaAs (001) substrates for the first time. The properties of the grown InAsSb films are systematically characterized by scanning electron… read more here.
Keywords: growth inassb; microscopy; inassb films; method ... See more keywords
The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2017.10.054
Abstract: Abstract We have fabricated the europium (Eu) doped Ga 2 O 3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are… read more here.
Keywords: gaas substrate; optical properties; dopant contents; impact dopant ... See more keywords
Electronic properties of metamorphic GaSbBi films on GaAs
Sign Up to like & getrecommendations! Published in 2024 at "APL Materials"
DOI: 10.1063/5.0249137
Abstract: We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 μm thick GaSbBi epilayers exhibit fully relaxed narrow x-ray diffraction… read more here.
Keywords: metamorphic gasbbi; electronic properties; films gaas; hole ... See more keywords