X-ray absorption spectroscopy study of Ga-doping in reactively sputtered ZnO films
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DOI: 10.1016/j.tsf.2020.137966
Abstract: Abstract Ga-doped ZnO (GZO) films were grown by reactive co-sputtering of a Zn-GaAs target (3% area coverage of Zn by GaAs) at 375 °C with different partial pressures of oxygen. The resistivity of GZO films increases drastically… read more here.
Keywords: resistivity; ray absorption; high resistivity; films ray ... See more keywords