On the crystallization behavior of sputter-deposited a-Si films on 4H-SiC
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DOI: 10.1016/j.tsf.2020.137837
Abstract: Abstract The crystallization behavior of sputter-deposited amorphous silicon (a-Si) films on 4H-SiC by post-deposition annealing (PDA) is investigated. Film thicknesses between 100 and 1500 nm were selected. PDA was carried out at temperatures between 800 and… read more here.
Keywords: films sic; sputter deposited; sputter; microscopy ... See more keywords