Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
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DOI: 10.3390/mi14050931
Abstract: In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which… read more here.
Keywords: fin gate; algan gan; band applications; linearity ... See more keywords