Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation
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DOI: 10.1007/s10825-016-0950-y
Abstract: Scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) to below a few tens of nanometer has failed to make significant improvements. FinFETs were introduced to replace MOS devices in circuits, offering good performance improvement in the nanoscale… read more here.
Keywords: junctionless finfet; based sram; finfet junctionless; finfet ... See more keywords