Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113545
Abstract: Abstract As the technology scales down, the performance characteristics are degraded and the reliability of digital circuits against soft error and aging effects are reduced. In this paper, we propose a reliable asymmetric FinFET 6T… read more here.
Keywords: asymmetric finfet; sram cell; back gate; finfet sram ... See more keywords
An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2019.2907594
Abstract: A previously unrecognized vertical-extrinsic device in advanced 7-nm FinFET SRAM structures is identified and characterized for the first time. The ON-current for this vertical-extrinsic device is modulated by gate bias and exhibits a process-dependent threshold… read more here.
Keywords: finfet sram; leakage; mechanism; extrinsic device ... See more keywords