Angular Sensitivity of Neutron-Induced Single-Event Upsets in 12-nm FinFET SRAMs With Comparison to 20-nm Planar SRAMs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2020.2989446
Abstract: The angular sensitivity of neutron-induced single-event upsets (SEUs) is studied in 12-nm FinFET SRAMs. Irradiation experiments are performed using a terrestrial environment-compatible source with varying incidence angles. The analyses of the occurrence rates of SEUs… read more here.
Keywords: angular sensitivity; finfet srams; planar srams; sensitivity neutron ... See more keywords
Hard-to-Detect Fault Analysis in FinFET SRAMs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2021.3071940
Abstract: Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET… read more here.
Keywords: finfet srams; test; htd; htd faults ... See more keywords