A Nano-Electro-Mechanical Switch Based Power Gating for Effective Stand-by Power Reduction in FinFET Technologies
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2686649
Abstract: In this letter, we show that using the experimentally demonstrated nano-electro-mechanical-switches (NEMS) and our design methodology, the standby power dissipation can be reduced to negligible levels in 14-nm bulk FinFET technologies. Using two realistic NEMS… read more here.
Keywords: finfet technologies; power gating; power; nano electro ... See more keywords
Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2775234
Abstract: Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms… read more here.
Keywords: event mechanisms; finfet technologies; angular effects; effects single ... See more keywords
Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3065267
Abstract: Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in… read more here.
Keywords: bulk finfet; evidence interface; finfet technologies; interface trap ... See more keywords