Performance Analysis of Charge Plasma Based Five Layered Black Phosphorus-Silicon Heterostructure Tunnel Field Effect Transistor
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DOI: 10.1007/s12633-020-00376-7
Abstract: In this paper, five layered Black Phosphorus (BP) – Silicon (Si) based Tunnel Field Effect Transistor (TFET) is used to overcome the thermionic limits faced by Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and analysis… read more here.
Keywords: charge plasma; field effect; effect transistor; five layered ... See more keywords