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   Articles with "flash memories" as a keyword



Leveraging the page buffer data cache for enhanced programmability in NAND flash memories with on‐chip microcontrollers

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recommendations! Published in 2024 at "Electronics Letters"

DOI: 10.1049/ell2.13111

Abstract: This paper proposes a simple yet effective scheme for NAND Flash memories that employ on‐chip microcontroller units (MCUs) to manage internal array operations. Through minimal hardware overhead, the proposed scheme enables—without mask revision— executing new… read more here.

Keywords: nand flash; flash memories; buffer data; chip ... See more keywords

Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

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recommendations! Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5017945

Abstract: This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source.… read more here.

Keywords: neutron; space; flash memories; isis spallation ... See more keywords

Adaptive Artificial Neural Network-Coupled LDPC ECC as Universal Solution for 3-D and 2-D, Charge-Trap and Floating-Gate NAND Flash Memories

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recommendations! Published in 2019 at "IEEE Journal of Solid-State Circuits"

DOI: 10.1109/jssc.2018.2884949

Abstract: Adaptive artificial neural network (ANN)-coupled low-density parity-check (LDPC) error-correcting code (ECC) (ANN-LDPC ECC) is proposed to increase acceptable errors for various NAND flash memories. The proposed ANN-LDPC ECC can be the universal solutions for 3-D… read more here.

Keywords: ldpc; ann ldpc; charge trap; floating gate ... See more keywords

Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations

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recommendations! Published in 2024 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2024.3400757

Abstract: In this article, a time constant of lateral charge loss (LCL) mechanism inside 3-D NAND flash memories during their data retention process is comprehensively investigated. 1-D multiscale simulation is conducted to investigate the lateral migration… read more here.

Keywords: time; charge loss; nand flash; flash memories ... See more keywords