Articles with "flash memory" as a keyword



Enhanced Device Characteristics of Hybrid‐Channel (Poly‐Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation‐Induced Variability for Ultra‐High‐Density 3D NAND Flash Memory Applications

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Published in 2025 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202510062

Abstract: Hybrid‐channel (HC) structures integrating polycrystalline silicon (poly‐Si) and oxide semiconductors offer a promising path toward high‐mobility, thermally stable architectures for next‐generation 3D NAND flash memory. However, high‐temperature annealing required for oxide crystallization often induces interfacial… read more here.

Keywords: hybrid channel; memory; flash memory; nand flash ... See more keywords

Review of Semiconductor Flash Memory Devices for Material and Process Issues.

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Published in 2022 at "Advanced materials"

DOI: 10.1002/adma.202200659

Abstract: Vertically integrated NAND (V-NAND) flash memory is the main data storage in modern handheld electronic devices, widening its share even in the data centers where installation and operation costs are critical. While the conventional scaling… read more here.

Keywords: devices material; flash memory; semiconductor flash; review semiconductor ... See more keywords
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A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory

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Published in 2020 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2020.113897

Abstract: Abstract With the improvement of manufacturing technology and the use of multi-level technology, the amount of charge stored in a flash memory cell decreases, the number of bits stored in each cell increases, the threshold… read more here.

Keywords: method based; threshold voltage; flash memory; nand flash ... See more keywords

Self-powered data erasing of nanoscale flash memory by triboelectricity

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Published in 2018 at "Nano Energy"

DOI: 10.1016/j.nanoen.2018.07.040

Abstract: Abstract Irrecoverable data destruction on a mobile device is important to prevent unintentional data disclosure. In this regard, transient electronics, a form of electronics that can be made to disappear or can be destroyed in… read more here.

Keywords: data erasing; triboelectricity; powered data; flash memory ... See more keywords
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Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates.

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Published in 2018 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.8b10203

Abstract: We fabricated MoS2-based flash memory devices by stacking MoS2 and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes,… read more here.

Keywords: double floating; devices double; memory devices; flash memory ... See more keywords
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Organic flash memory on various flexible substrates for foldable and disposable electronics

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Published in 2017 at "Nature Communications"

DOI: 10.1038/s41467-017-00805-z

Abstract: With the emergence of wearable or disposable electronics, there grows a demand for a flash memory realizable on various flexible substrates. Nevertheless, it has been challenging to develop a flash memory that simultaneously exhibits a… read more here.

Keywords: flexible substrates; disposable electronics; various flexible; organic flash ... See more keywords

Concealable physical unclonable functions using vertical NAND flash memory

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Published in 2025 at "Nature Communications"

DOI: 10.1038/s41467-025-60415-y

Abstract: Physical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory. However, it has been optimized to reduce cell-to-cell variation for stable data… read more here.

Keywords: memory; flash memory; nand flash; puf ... See more keywords
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Ultrafast non-volatile flash memory based on van der Waals heterostructures

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Published in 2021 at "Nature Nanotechnology"

DOI: 10.1038/s41565-021-00921-4

Abstract: Flash memory has become a ubiquitous solid-state memory device widely used in portable digital devices, computers and enterprise applications. The development of the information age has demanded improvements in memory speed and retention performance. Here… read more here.

Keywords: volatile flash; non volatile; van der; ultrafast non ... See more keywords

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure

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Published in 2025 at "Scientific Reports"

DOI: 10.1038/s41598-025-89936-8

Abstract: This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect. The modeling methodology is based on a homogeneous method for investigating… read more here.

Keywords: methodology; structure; modeling methodology; flash memory ... See more keywords

Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices

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Published in 2018 at "Nature Electronics"

DOI: 10.1038/s41928-017-0007-7

Abstract: Advances in nanophotonics and plasmonics have led to the creation of a variety of innovative optical components and devices. However, the development of powerful practical applications has so far been limited. Here we show that… read more here.

Keywords: three dimensional; dimensional nand; memory devices; flash memory ... See more keywords

Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

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Published in 2018 at "Journal of Materials Chemistry C"

DOI: 10.1039/c8tc03140a

Abstract: A series of non-conjugated ferrocene-containing copolymers FcCP1–FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics… read more here.

Keywords: non conjugated; containing copolymers; flash memory; ferrocene containing ... See more keywords