Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection
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DOI: 10.1088/1361-6463/ab41dc
Abstract: The effect of phosphorus inclusion on different bias stress at high electric field on phosphorus doped SiO2 is investigated by electrical measurements of SiC MOS capacitors. 1 MHz measurements with (1) different bias hold time… read more here.
Keywords: shift; voltage; phosphorus doped; phosphorus ... See more keywords