Photoactivated high-k lanthanum oxide-aluminum oxide (La2O3–Al2O3) alloy-type gate dielectrics for low-voltage-operating flexible transistors
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.155671
Abstract: Abstract Low-temperature-processable gate dielectrics with high dielectric constants, low leakage current, and good electrical/mechanical stabilities are largely pursued in diverse electronics including flexible transistors, wearable sensors, integrated logic circuits, and various optoelectronic devices. Here, we… read more here.
Keywords: gate dielectrics; lanthanum oxide; flexible transistors; oxide aluminum ... See more keywords
High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides
Sign Up to like & getrecommendations! Published in 2023 at "ACS Nano"
DOI: 10.1021/acsnano.2c11319
Abstract: The investigation of high-mobility two-dimensional (2D) flakes beyond molybdenum disulfide (MoS2) will be necessary to create a library of high-mobility solution-processed networks that conform to substrates and remain functional over thousands of bending cycles. Here… read more here.
Keywords: mobility flexible; mobility; solution processed; high mobility ... See more keywords