Sensitivity and Mechanism Study of Single-Event Burnout in 4H-SiC Devices With FLRs Termination
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DOI: 10.1109/ted.2023.3270132
Abstract: The 4H-silicon carbide (SiC) junction barrier Schottky with field limiting rings (FLRs-JBS) termination was fabricated and analyzed to evaluate its radiation tolerance of the single-event burnout (SEB). Experimental and simulation results show that the SiC/SiO2/metal… read more here.
Keywords: event burnout; event; area; termination ... See more keywords