Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
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DOI: 10.1063/1.5144507
Abstract: The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion… read more here.
Keywords: schottky barrier; barrier height; inserted layers; oxygen inserted ... See more keywords