Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
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DOI: 10.1116/1.4971171
Abstract: This work demonstrated a process for the atomic-scale etching of SiO2 films, consisting of alternating nanometer-thick fluorocarbon film deposition with O2 plasma irradiation in a capacitively coupled plasma reactor. Ar plasma etching after fluorocarbon film… read more here.
Keywords: deposition; fluorocarbon film; plasma; etching sio2 ... See more keywords