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Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618030168
Abstract: The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of…
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Keywords:
flux decrease;
light flux;
emitting diodes;
light emitting ... See more keywords