High performance vacuum annealed β-(AlxGa1−x)2O3/Ga2O3 HFET with fT/fMAX of 32/65 GHz
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DOI: 10.35848/1882-0786/adeb43
Abstract: This letter reports high performance β - (AlxGa1−x)2O3/Ga2O3 Heterostructure FET (HFET) with an improved regrowth process and successful Al2O3 passivation. Highly scaled I shaped gates (100–200 nm LG) have been fabricated with degenerately doped (N++)… read more here.
Keywords: ghz; fmax ghz; high performance; 2o3 ga2o3 ... See more keywords