Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Engineering Materials"
DOI: 10.1002/adem.202000901
Abstract: The effect of electro‐thermal stress on the electrical performance of flexible, low‐temperature polysilicon (LTPS) thin‐film transistors (TFTs) after mechanical‐folding stress aiming to improve the reliability of foldable display backplanes is studied (IG). Herein, for the… read more here.
Keywords: film transistor; stress; thin film; folding stress ... See more keywords