Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode
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DOI: 10.1134/s1063782620010108
Abstract: Abstract Methods of micro-profiling of 4 H -SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom… read more here.
Keywords: profiling sic; micro profiling; form schottky; etching form ... See more keywords