Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry
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DOI: 10.1039/c8ce00431e
Abstract: We analyze the temporal variation of the substrate optical reflectance during the formation of GaN nanowires in molecular beam epitaxy using transverse electric and transverse magnetic polarized light. The time dependence of the reflectance signal… read more here.
Keywords: nanowires molecular; formation gan; gan nanowires; molecular beam ... See more keywords