Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study
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DOI: 10.1109/ted.2023.3270259
Abstract: Silicon channel tunnel field-effect transistors (TFETs) are known to exhibit low ON-state current due to the wide indirect band gap. In this work, to achieve high ON-state current, we propose a Si TFET with an… read more here.
Keywords: dipole formation; formation layer; state current;