2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0050584
Abstract: Integration of nitrides with other material systems has recently become of interest due to the high performance of GaN-based high-electron mobility transistors. However, the elevated growth temperatures often used to grow high quality AlN pose… read more here.
Keywords: low temperature; temperature; aln gan; gan hemt ... See more keywords