High voltage GaN p‐n diodes formed by selective area regrowth
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2019.3587
Abstract: GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a… read more here.
Keywords: regrowth; selective area; area; gan diodes ... See more keywords
Low cycle fatigue and creep–fatigue performance of 316SS formed by selective laser melting
Sign Up to like & getrecommendations! Published in 2023 at "Materials at High Temperatures"
DOI: 10.1080/09603409.2023.2205761
Abstract: ABSTRACT The fatigue and creep–fatigue properties of 316SS formed by selective laser melting (SLM) were investigated, considering the effects of different peak stresses, stress rates and peak-holding times on the ratcheting and creep-ratcheting behaviour of… read more here.
Keywords: formed selective; fatigue; creep fatigue; selective laser ... See more keywords