Squeeze-Printing Ultrathin 2D Gallium Oxide out of Liquid Metal for Forming-Free Neuromorphic Memristors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c02998
Abstract: Two-dimensional (2D) metal oxides exhibit extraordinary mechanical and electronic properties, leading to new paradigms in the design of electronic and optical systems. However, as a representative, a 2D Ga2O3-based memristor has rarely been touched, which… read more here.
Keywords: printing ultrathin; forming free; gallium; liquid ... See more keywords
Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5023015
Abstract: The influence of the switching layer thickness and the device size on the threshold switching characteristics has been investigated in Ag/ZrO2/Pt selector device. By optimizing the switching layer thickness, excellent threshold switching characteristics such as… read more here.
Keywords: high selectivity; thickness; forming free; size ... See more keywords
Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3022005
Abstract: Resistive random access memories (RRAMs) have attracted tremendous attention due to their miniaturized size, low power consumption, high response speed, and simple fabrication requirements, which are regarded as a promising candidate for future nonvolatile memories.… read more here.
Keywords: zno qds; forming free; resistive switching; switching behavior ... See more keywords
Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15248858
Abstract: In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without… read more here.
Keywords: wox taox; forming free; analog switching; tunable analog ... See more keywords
Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials"
DOI: 10.3390/nano10051007
Abstract: We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and… read more here.
Keywords: zno; forming free; effect; switching effect ... See more keywords
Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12030455
Abstract: This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition.… read more here.
Keywords: nanocrystalline zno; tin zno; forming free; resistive switching ... See more keywords
Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12223944
Abstract: The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf–Nb… read more here.
Keywords: memristors grown; forming free; switching forming; threshold switching ... See more keywords