The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105527
Abstract: Abstract This letter reports on the improvement of a SiO2 layer formed by atomic layer deposition on 4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage measurements revealed good electrical properties, compared to a… read more here.
Keywords: improvement; layer; atomic layer; forming gas ... See more keywords
Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2987005
Abstract: In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not… read more here.
Keywords: cmos inverter; fefets cmos; gas annealing; forming gas ... See more keywords