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   Articles with "forward bias" as a keyword



Efficient Forward‐Bias Bipolar Membrane CO2 Electrolysis in Absence of Metal Cations

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recommendations! Published in 2025 at "Advanced Energy Materials"

DOI: 10.1002/aenm.202500186

Abstract: The acid‐base reaction of CO2 with hydroxide ions to (bi)carbonate anions at the cathode of alkaline exchange membrane (AEM) CO2 electrolyzer has detrimental impact on their performance. (Bi)carbonate buffers the local cathode pH, and in… read more here.

Keywords: metal cations; co2; membrane; metal ... See more keywords

Inflation targeting and the forward bias puzzle in emerging countries

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recommendations! Published in 2019 at "Journal of International Money and Finance"

DOI: 10.1016/j.jimonfin.2018.09.003

Abstract: Based on quarterly data on 31 emerging countries (among which 16 are inflation targeting countries) from 1990Q1 to 2014Q3, we obtain a strong support for the conjecture that the implementation of inflation targeting weakens the… read more here.

Keywords: forward bias; emerging countries; inflation; inflation targeting ... See more keywords

Ultra-violet photo-response characteristics of p-Si/i-SiO2/n-ZnO heterojunctions based on hydrothermal ZnO nanorods

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recommendations! Published in 2017 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2017.04.031

Abstract: Abstract Hydrothermal zinc oxide (ZnO) nanorod (NR)-based p -Si/ n -ZnO and p -Si/ i -SiO 2 / n -ZnO heterojunctions were fabricated, and the effects of interfacial native SiO 2 (~4 nm) on the I-V… read more here.

Keywords: zno heterojunctions; response; hydrothermal zno; zno ... See more keywords

Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations

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recommendations! Published in 2020 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2020.107770

Abstract: Abstract We propose a calculation model of current density that causes forward bias degradation from substrate basal plane dislocations (BPDs) in 4H-SiC PiN diodes. The hole concentration above which substrate BPDs expand to single Shockley… read more here.

Keywords: sic pin; forward bias; bias degradation; pin diodes ... See more keywords

Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias

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recommendations! Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0011831

Abstract: In this work, the breakdown characteristics and the electroluminescence (EL) spectra of a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias were investigated at different temperatures. The failure of the metal/p-GaN junction, which was caused by electron transport… read more here.

Keywords: metal gan; enhanced hole; thermally enhanced; metal ... See more keywords