Inflation targeting and the forward bias puzzle in emerging countries
Sign Up to like & getrecommendations! Published in 2019 at "Journal of International Money and Finance"
DOI: 10.1016/j.jimonfin.2018.09.003
Abstract: Based on quarterly data on 31 emerging countries (among which 16 are inflation targeting countries) from 1990Q1 to 2014Q3, we obtain a strong support for the conjecture that the implementation of inflation targeting weakens the… read more here.
Keywords: forward bias; emerging countries; inflation; inflation targeting ... See more keywords
Ultra-violet photo-response characteristics of p-Si/i-SiO2/n-ZnO heterojunctions based on hydrothermal ZnO nanorods
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.04.031
Abstract: Abstract Hydrothermal zinc oxide (ZnO) nanorod (NR)-based p -Si/ n -ZnO and p -Si/ i -SiO 2 / n -ZnO heterojunctions were fabricated, and the effects of interfacial native SiO 2 (~4 nm) on the I-V… read more here.
Keywords: zno heterojunctions; response; hydrothermal zno; zno ... See more keywords
Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107770
Abstract: Abstract We propose a calculation model of current density that causes forward bias degradation from substrate basal plane dislocations (BPDs) in 4H-SiC PiN diodes. The hole concentration above which substrate BPDs expand to single Shockley… read more here.
Keywords: sic pin; forward bias; bias degradation; pin diodes ... See more keywords
Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0011831
Abstract: In this work, the breakdown characteristics and the electroluminescence (EL) spectra of a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias were investigated at different temperatures. The failure of the metal/p-GaN junction, which was caused by electron transport… read more here.
Keywords: metal gan; enhanced hole; thermally enhanced; metal ... See more keywords