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Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States

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Published in 2017 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-017-5916-8

Abstract: In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current–voltage curves of aluminum (Al)-implanted 4H-SiC p-i-n diodes is investigated by means of a physics-based… read more here.

Keywords: defect states; analysis forward; characteristics implanted; sic diodes ... See more keywords