Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5034444
Abstract: A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x… read more here.
Keywords: figure merit; ga2o3 schottky; reverse breakdown; schottky rectifiers ... See more keywords
Vertical Geometry, 2-A Forward Current Ga 2 O 3 Schottky Rectifiers on Bulk Ga 2 O 3 Substrates
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2838439
Abstract: Large area (up to 0.2 cm2) Ga2O3 rectifiers without edge termination were fabricated on a Si-doped n-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+Ga2O3 (001) substrate. A forward current of… read more here.
Keywords: temperature; geometry; forward current; vertical geometry ... See more keywords