Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test
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DOI: 10.3390/en17112557
Abstract: Silicon carbide (SiC)-based metal–oxide–semiconductor field-effect transistors (MOSFETs) hold promising application prospects in future high-capacity high-power converters due to their excellent electrothermal characteristics. However, as nascent power electronic devices, their long-term operational reliability lacks sufficient field… read more here.
Keywords: forward power; cycling test; power cycling; sic mosfets ... See more keywords