Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs
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DOI: 10.1016/j.apsusc.2019.03.065
Abstract: Abstract We demonstrate patterned Al2O3 formation by post-plasma oxidation of a thin layer of aluminium (Al) film deposited by electron beam evaporator in area selective regions. The oxide quality is observed to further improve by… read more here.
Keywords: found respectively; plasma oxidation; post plasma; plasma ... See more keywords