Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film
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DOI: 10.1063/5.0219833
Abstract: Growing crack-free, epitaxial ultrawide-bandgap semiconductor films on cost-effective, large-area substrates, such as AlN on Si, poses a significant challenge due to substantial lattice and thermal expansion mismatches. We introduce an approach to mitigate tensile strain… read more here.
Keywords: free aln; aln layer; strain; aln ... See more keywords