High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
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DOI: 10.1063/5.0026017
Abstract: We herein report the growth of phosphor-free InGaN-based white light-emitting diodes (LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red InGaN quantum wells (QWs). To improve the current injection and generate… read more here.
Keywords: ingan based; injection; free ingan; white light ... See more keywords