Global dynamics of composite panels with free-layer damping treatment in subsonic flow
Sign Up to like & getrecommendations! Published in 2017 at "Composite Structures"
DOI: 10.1016/j.compstruct.2017.02.024
Abstract: Abstract Global dynamics of forcedly excited composite panels with free layer damping treatment in subsonic flow near the first-order critical velocity is investigated. Hamilton’s principle is implemented to derive the PDE of such fluid-structure interaction… read more here.
Keywords: composite panels; flow; layer damping; panels free ... See more keywords
Temperature dependence of spin-torque driven ferromagnetic resonance in MgO-based magnetic tunnel junction with a perpendicularly free layer
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2017.07.075
Abstract: Abstract We report the temperature dependence of the spin-torque (ST) driven ferromagnetic resonance in MgO-based magnetic tunnel junction (MTJ) nanopillars with a perpendicularly free layer and an in-plane reference layer. From the evolution of the… read more here.
Keywords: resonance; layer; free layer; temperature dependence ... See more keywords
Tailoring of magnetic properties of giant magnetoresistance spin valves via insertion of ultrathin non-magnetic spacers between pinned and pinning layers
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-018-38269-w
Abstract: The low-field sensitivity of a giant magnetoresistance (GMR) spin valve can be enhanced by tailoring the bias field of the free layer because this sensitivity and bias field are known to show a strong correlation.… read more here.
Keywords: field; giant magnetoresistance; free layer; via insertion ... See more keywords
Stochastic neuron based on dual-free-layer magnetic tunnel junction
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0260901
Abstract: In this Letter, we present a stochastic neuron implemented based on a dual-free-layer magnetic tunnel junction (MTJ). The device exhibits a stochastic switching behavior by utilizing coupled degrees of freedom and dynamic oscillation induced by… read more here.
Keywords: based dual; layer magnetic; free layer; stochastic neuron ... See more keywords
Towards fully electrically controlled domain-wall logic
Sign Up to like & getrecommendations! Published in 2024 at "AIP Advances"
DOI: 10.1063/9.0000811
Abstract: Utilizing magnetic tunnel junctions (MTJs) for write/read and fast spin-orbit-torque (SOT)-driven domain-wall (DW) motion for propagation, enables non-volatile logic and majority operations, representing a breakthrough in the implementation of nanoscale DW logic devices. Recently, current-driven… read more here.
Keywords: pma; domain wall; electrically controlled; logic ... See more keywords
Comparison of Sensitivity and Low-Frequency Noise Contributions in Giant-Magnetoresistive and Tunneling-Magnetoresistive Spin-Valve Sensors with a Vortex-State Free Layer
Sign Up to like & getrecommendations! Published in 2018 at "Physical Review Applied"
DOI: 10.1103/physrevapplied.10.054056
Abstract: Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state… read more here.
Keywords: free layer; vortex state; noise; state free ... See more keywords
Voltage-Induced Precessional Switching at Zero-Bias Magnetic Field in a Conically Magnetized Free Layer
Sign Up to like & getrecommendations! Published in 2018 at "Physical review applied"
DOI: 10.1103/physrevapplied.9.014026
Abstract: Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce… read more here.
Keywords: voltage; magnetized free; voltage induced; conically magnetized ... See more keywords
Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review B"
DOI: 10.1103/physrevb.96.014412
Abstract: Magnetoresistive and magnetoresonance measurements carried out on patterned perpendicular magnetic tunnel junction pillars and full-sheet films reveal magnetic inhomogeneities of FeCoB free layer grown on MgO and coated with Ta. At low FeCoB thicknesses, the… read more here.
Keywords: free layer; transfer torque; spin transfer; layer ... See more keywords
Low Hysteresis and High Stability in Tunneling Magnetoresistance Vortex Sensors With a Composite Free Layer
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3401830
Abstract: The linearity of tunneling magnetoresistance (TMR) sensors is challenging due to the intrinsic magnetic hysteresis of the ferromagnetic Co-Fe-B layer used as the free layer. In this work, by using a composite free layer of… read more here.
Keywords: layer; tunneling magnetoresistance; low hysteresis; free layer ... See more keywords
Simulation of Strain-Assisted Switching in Synthetic Antiferromagnetic Free Layer-Based Magnetic Tunnel Junction
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2019.2898947
Abstract: We perform macrospin simulations on a magnetic tunnel junction structure with perpendicular magnetic anisotropy, in which the conventional free layer is substituted with synthetic antiferromagnetic free layers to improve the thermal stability. In order to… read more here.
Keywords: tunnel junction; synthetic antiferromagnetic; magnetic tunnel; layer ... See more keywords
Data-Writing and Shifting Processes Toward a Vertical Domain Wall Motion Memory
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2025.3556016
Abstract: We demonstrate data writing and shifting processes in a double-free-layer nanopillar with perpendicular magnetic anisotropy (PMA). For the data writing process, the magnetization of the lower free layer is switched by injecting in-plane current pulses… read more here.
Keywords: data writing; memory; writing shifting; free layer ... See more keywords