Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read.
Sign Up to like & getrecommendations! Published in 2021 at "Nanoscale"
DOI: 10.1039/d1nr05107e
Abstract: Ferroelectric field-effect transistors (FeFETs) with a single gate structure and using the newly discovered ferroelectric hafnium oxide as an active material are attracting considerable interest for nonvolatile memory devices. However, such FeFETs struggle to achieve… read more here.
Keywords: memory window; double gate; free read; disturb free ... See more keywords
CURC: a CUDA-based reference-free read compressor
Sign Up to like & getrecommendations! Published in 2022 at "Bioinformatics"
DOI: 10.1093/bioinformatics/btac333
Abstract: MOTIVATION The data deluge of high-throughput sequencing has posed great challenges to data storage and transfer. Many specific compression tools have been developed to solve this problem. However, most of the existing compressors are based… read more here.
Keywords: read compressor; free read; reference free; curc ... See more keywords