Forming-Free Resistive Switching Behavior in Pt/NiFe2O4/SrRuO3 Devices: Simulation and Experimental Insights Into Oxygen Vacancy Engineering
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DOI: 10.1109/ted.2025.3537950
Abstract: NiFe2O4 (NFO) thin films have been explored for resistive switching applications, yet high forming voltages remain a challenge. This work presents Pt/NFO/SrRuO3 devices featuring a forming-free switching behavior enabled by engineered oxygen vacancies, forming conductive… read more here.
Keywords: oxygen; forming free; srruo3 devices; free resistive ... See more keywords