Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites
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DOI: 10.1002/adma.202205055
Abstract: The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results… read more here.
Keywords: transistors based; trap free; based epitaxial; intrinsic trap ... See more keywords
Tuning Ambipolarity of the Conjugated Polymer Channel Layers of Floating‐Gate Free Transistors: From Volatile Memories to Artificial Synapses
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DOI: 10.1002/advs.202203025
Abstract: Abstract Three‐terminal synaptic transistor has drawn significant research interests for neuromorphic computation due to its advantage of facile device integrability. Lately, bulk‐heterojunction‐based synaptic transistors with bipolar modulation are proposed to exempt the use of an… read more here.
Keywords: floating gate; polymer channel; ambipolarity; free transistors ... See more keywords