Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125462
Abstract: Abstract Reducing the thermal stress induced in GaN crystals is key for the fabrication of large-diameter GaN crystals. In the Na-flux method, thermal stress is eliminated by sapphire dissolution at growth temperature after growth. We… read more here.
Keywords: dissolution; sapphire; freestanding gan; dissolution sapphire ... See more keywords
InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate
Sign Up to like & getrecommendations! Published in 2018 at "ACS Photonics"
DOI: 10.1021/acsphotonics.7b01453
Abstract: We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN grown using a Si substrate. Transmission electron microscopy and X-ray diffraction analysis revealed that the InGaN/GaN multi quantum wells (MQWs) on freestanding… read more here.
Keywords: blue light; ingan gan; freestanding gan; gan blue ... See more keywords
Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac0525
Abstract: AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs… read more here.
Keywords: substrates sapphire; sapphire substrates; freestanding gan; resonant tunneling ... See more keywords