Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
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DOI: 10.1103/physrevmaterials.2.011601
Abstract: Solid state devices based on InGaN\penalty1000-\hskip0ptalloys have revolutionized lighting applications and have resulted in huge energy savings. Here, the authors investigate the growth of single monolayer InGaN layers by well-designed growth experiments, advanced characterization, and… read more here.
Keywords: rehybridization origin; origin chemical; frustrated rehybridization; chemical order ... See more keywords