Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
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DOI: 10.35848/1882-0786/ac1b3e
Abstract: The full InGaN structure was grown on two different InGaNOS substrates from Soitec. An electron blocking layer was inserted in the full InGaN light emitting diode (LED). Enhanced internal quantum efficiency of red emitting InGaN/InGaN… read more here.
Keywords: 625 micro; full ingan; red 625; ingan ... See more keywords