Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films.
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DOI: 10.1021/acsami.6b09380
Abstract: Corundum-structured α-phase Ga1.4Sn0.6O3 thin films have been deposited on m-plane Al2O3(300) substrates using laser molecular beam epitaxy technology. With increasing of the oxygen partial pressure, the crystal lattice of Ga1.4Sn0.6O3 films expands due to tin… read more here.
Keywords: thin films; 6o3 thin; valence; ga1 4sn0 ... See more keywords