Effect of Ga1-xInxAs1-yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode.
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DOI: 10.1364/ol.451551
Abstract: A GaInAsP/GaAs/GaAsP Al-free laser with asymmetric potential barriers is designed theoretically to prevent carrier leakage. The band alignment demonstrates that a high height of the potential barrier decreases the leakage current. The internal quantum efficiency… read more here.
Keywords: potential barrier; effect ga1; laser; ga1 xinxas1 ... See more keywords