Articles with "ga2o3" as a keyword



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Tackling Disorder in γ‐Ga2O3

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Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202204217

Abstract: Ga2O3 and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga2O3 offers potential for electronic structure engineering, which is of particular interest for a range of applications,… read more here.

Keywords: tackling disorder; structure; spectroscopy; electronic structure ... See more keywords
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Efficient White Light Emission from Ga/Ga2O3 Hybrid Nanoparticles

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Published in 2021 at "Advanced Optical Materials"

DOI: 10.1002/adom.202100675

Abstract: Gallium (Ga) emerges as a promising material in plasmonics mainly due to its extraordinary properties, such as changeable material phase, tunable plasmon resonances across the ultraviolet to near‐infrared spectral range, and remarkable chemical stability. Here,… read more here.

Keywords: light emission; efficient white; ga2o3; ga2o3 hybrid ... See more keywords

ε‐Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

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Published in 2022 at "Advanced Science"

DOI: 10.1002/advs.202203927

Abstract: The explosion of mobile data from the internet of things (IoT) is leading to the emergence of 5G technology with dramatic frequency band expansion and efficient band allocations. Along with this, the demand for high‐performance… read more here.

Keywords: application; frequency; semiconductor; wide bandgap ... See more keywords
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Effect of Ti doping on the crystallography, phase, surface/interface structure and optical band gap of Ga2O3 thin films

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Published in 2019 at "Journal of Materials Science"

DOI: 10.1007/s10853-019-03663-w

Abstract: The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga2O3) (GTO) films is reported. The Ti content was varied from 0 to ~ 5 at%… read more here.

Keywords: band gap; ga2o3; chemistry; gto films ... See more keywords
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Temperature-Dependent Crystallization of Ga2O3 for Ultraviolet Photodetectors

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Published in 2020 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-019-07924-x

Abstract: As an n-type oxide semiconductor, Ga2O3 shows great promise in solar-blind ultraviolet (UV) photodetectors due to its adequate band gap, high absorption coefficient, high thermal and chemical stability, high breakdown voltage, and high sensitivity to… read more here.

Keywords: microscopy; ga2o3; crystallization; ultraviolet photodetectors ... See more keywords
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Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics

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Published in 2020 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-020-08261-0

Abstract: The increase of bias-dependent source access resistance, rs, with high gate bias is attributed to a sharp drop in transconductance, gm, and current gain cut-off frequency, fT, of high-electron-mobility transistors (HEMTs). Consequently, source and drain… read more here.

Keywords: ga2o3; source; effect; resistance ... See more keywords
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Band offsets in ITO/Ga 2 O 3 heterostructures

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Published in 2017 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2017.05.262

Abstract: Abstract The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were… read more here.

Keywords: offsets ito; ito heterostructures; ga2o3; band offsets ... See more keywords
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Point defects induced work function modulation of β-Ga2O3

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Published in 2019 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2018.09.236

Abstract: Abstract Effect of point defects such as vacancies and interstitials on the work function of β-Ga2O3 thin films grown by pulsed laser deposition was investigated. Relative change in Ag3 and Ag6 Raman phonon modes indicated… read more here.

Keywords: ga2o3; work function; point defects; oxygen ... See more keywords
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Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application

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Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2020.148130

Abstract: Abstract The etching process of an ultra-wide bandgap β-Ga2O3 semiconductor is challenging, owing to its high chemical robustness and bond strength. We demonstrated the photoelectrochemical (PEC) etching of β-Ga2O3 using phosphoric acid as electrical potential… read more here.

Keywords: ultra wide; wide bandgap; ga2o3; bandgap ga2o3 ... See more keywords
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Mechanistic insights into the conversion of Ga2O3 to GaN using TGA experiments and DFT modeling

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Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2021.150015

Abstract: Abstract TG experiments and DFT calculations were used to investigate the mechanism of gallium oxide nitridation to gallium nitride. The overall conversion of the gas-solid reaction can be best described by a modified integrated model… read more here.

Keywords: conversion; activation energy; ga2o3; experiments dft ... See more keywords
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Room-temperature synthesis of γ-Ga2O3 nanoparticles from gallium metal via ultrasound irradiation

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Published in 2021 at "Advanced Powder Technology"

DOI: 10.1016/j.apt.2021.01.032

Abstract: Abstract In this study, gallium oxide (Ga2O3) nanoparticles were synthesized by sonochemical techniques at room temperature. We investigate the ultrasound irradiation conditions and the solvent type to synthesize Ga2O3 nanoparticles. γ-Ga2O3 nanoparticles were synthesized by… read more here.

Keywords: gallium metal; ga2o3; ga2o3 nanoparticles; irradiation ... See more keywords