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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202204217
Abstract: Ga2O3 and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga2O3 offers potential for electronic structure engineering, which is of particular interest for a range of applications,…
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Keywords:
tackling disorder;
structure;
spectroscopy;
electronic structure ... See more keywords
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Published in 2021 at "Advanced Optical Materials"
DOI: 10.1002/adom.202100675
Abstract: Gallium (Ga) emerges as a promising material in plasmonics mainly due to its extraordinary properties, such as changeable material phase, tunable plasmon resonances across the ultraviolet to near‐infrared spectral range, and remarkable chemical stability. Here,…
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Keywords:
light emission;
efficient white;
ga2o3;
ga2o3 hybrid ... See more keywords
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Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202203927
Abstract: The explosion of mobile data from the internet of things (IoT) is leading to the emergence of 5G technology with dramatic frequency band expansion and efficient band allocations. Along with this, the demand for high‐performance…
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Keywords:
application;
frequency;
semiconductor;
wide bandgap ... See more keywords
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Published in 2019 at "Journal of Materials Science"
DOI: 10.1007/s10853-019-03663-w
Abstract: The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga2O3) (GTO) films is reported. The Ti content was varied from 0 to ~ 5 at%…
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Keywords:
band gap;
ga2o3;
chemistry;
gto films ... See more keywords
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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07924-x
Abstract: As an n-type oxide semiconductor, Ga2O3 shows great promise in solar-blind ultraviolet (UV) photodetectors due to its adequate band gap, high absorption coefficient, high thermal and chemical stability, high breakdown voltage, and high sensitivity to…
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Keywords:
microscopy;
ga2o3;
crystallization;
ultraviolet photodetectors ... See more keywords
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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08261-0
Abstract: The increase of bias-dependent source access resistance, rs, with high gate bias is attributed to a sharp drop in transconductance, gm, and current gain cut-off frequency, fT, of high-electron-mobility transistors (HEMTs). Consequently, source and drain…
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Keywords:
ga2o3;
source;
effect;
resistance ... See more keywords
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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.05.262
Abstract: Abstract The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were…
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Keywords:
offsets ito;
ito heterostructures;
ga2o3;
band offsets ... See more keywords
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Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.09.236
Abstract: Abstract Effect of point defects such as vacancies and interstitials on the work function of β-Ga2O3 thin films grown by pulsed laser deposition was investigated. Relative change in Ag3 and Ag6 Raman phonon modes indicated…
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Keywords:
ga2o3;
work function;
point defects;
oxygen ... See more keywords
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Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.148130
Abstract: Abstract The etching process of an ultra-wide bandgap β-Ga2O3 semiconductor is challenging, owing to its high chemical robustness and bond strength. We demonstrated the photoelectrochemical (PEC) etching of β-Ga2O3 using phosphoric acid as electrical potential…
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Keywords:
ultra wide;
wide bandgap;
ga2o3;
bandgap ga2o3 ... See more keywords
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Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150015
Abstract: Abstract TG experiments and DFT calculations were used to investigate the mechanism of gallium oxide nitridation to gallium nitride. The overall conversion of the gas-solid reaction can be best described by a modified integrated model…
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Keywords:
conversion;
activation energy;
ga2o3;
experiments dft ... See more keywords
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Published in 2021 at "Advanced Powder Technology"
DOI: 10.1016/j.apt.2021.01.032
Abstract: Abstract In this study, gallium oxide (Ga2O3) nanoparticles were synthesized by sonochemical techniques at room temperature. We investigate the ultrasound irradiation conditions and the solvent type to synthesize Ga2O3 nanoparticles. γ-Ga2O3 nanoparticles were synthesized by…
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Keywords:
gallium metal;
ga2o3;
ga2o3 nanoparticles;
irradiation ... See more keywords