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Published in 2019 at "Materials Today Physics"
DOI: 10.1016/j.mtphys.2019.100157
Abstract: Abstract Gallium oxide (Ga2O3), with an ultrawide-bandgap of ~4.9 eV, has attracted recently much scientific and technological attention due to its extensive future applications in power electronics (field effect transistors, Schottky barrier diodes), optoelectronics (phosphors and…
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Keywords:
optoelectronic devices;
review ga2o3;
based optoelectronic;
ga2o3 based ... See more keywords
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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01322
Abstract: As a kind of photodetector, position-sensitive-detectors (PSDs) have been widely used in noncontact photoelectric positioning and measurement. However, fabrications and applications of solar-blind PSDs remain yet to be harnessed. Herein, we demonstrate a solar-blind PSD…
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Keywords:
based solar;
ga2o3 based;
solar blind;
measurement ... See more keywords
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Published in 2024 at "Journal of Materials Chemistry C"
DOI: 10.1039/d4tc03701d
Abstract: The sub-intense component in the XPS O 1s spectra of β-Ga2O3 is not associated with oxygen vacancies, the intrinsic indirect bandgap and the surface traps contribute to the extension of the response and recovery times…
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Keywords:
detection performance;
time resolved;
ga2o3;
study time ... See more keywords
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Published in 2025 at "Materials Research Express"
DOI: 10.1088/2053-1591/adc3ed
Abstract: Gallium oxide (Ga2O3), a wide bandgap semiconductor of the fourth generation, shows great potential for advanced optoelectronic applications. While β-Ga2O3-based photodetectors (PDs) have been extensively studied, research on α-Ga2O3-based PDs remains scarce. This work investigates…
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Keywords:
gallium oxide;
ga2o3;
performance;
metal ... See more keywords
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Published in 2023 at "Crystals"
DOI: 10.3390/cryst13040666
Abstract: In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software. The simulation parameters of β-Ga2O3, including…
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Keywords:
schottky barrier;
without fmrs;
ga2o3 based;
floating metal ... See more keywords
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Published in 2024 at "Nanomaterials"
DOI: 10.3390/nano14242035
Abstract: This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-Ga2O3-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs) and P-N…
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Keywords:
work;
ga2o3 based;
temperature characteristics;
electrical temperature ... See more keywords
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Published in 2025 at "Nanomaterials"
DOI: 10.3390/nano15171365
Abstract: Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This…
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Keywords:
gallium oxide;
oxide memristors;
memristors review;
based memristors ... See more keywords