Articles with "ga2o3 films" as a keyword



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Study on the optical properties of β-Ga2O3 films grown by MOCVD

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Published in 2017 at "Journal of Materials Science: Materials in Electronics"

DOI: 10.1007/s10854-017-6882-x

Abstract: Abstractβ-Ga2O3 films were grown on c-plane sapphire substrates at different substrate temperatures by metal-organic chemical vapor deposition. The effects of substrate temperature on transparence, optical band gap and photoluminescence of the films were studied systematically.… read more here.

Keywords: temperature; study optical; optical properties; ga2o3 films ... See more keywords
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Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition

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Published in 2020 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2019.125455

Abstract: Abstract In this study, the structure, morphology, electrical and optical properties of Si and Ta co-doped gallium oxide (Ga2O3) films deposited on (1 0 0) Ga2O3, (0 0 0 1) sapphire and quartz substrates by pulsed laser deposition are analyzed.… read more here.

Keywords: laser deposition; ga2o3 films; doped ga2o3; substrates doped ... See more keywords
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Solar-blind ultraviolet photodetectors based on homoepitaxial β-Ga2O3 films

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Published in 2021 at "Optical Materials"

DOI: 10.1016/j.optmat.2021.111665

Abstract: Abstract β gallium oxide (β-Ga2O3) is a promising material for the detection of solar-blind ultraviolet (SBUV). The quality of β-Ga2O3 crystal has a crucial influence on the performance of the photodetectors (PDs). In this paper,… read more here.

Keywords: ga2o3; ga2o3 films; solar blind; homoepitaxial ga2o3 ... See more keywords
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Efficient pure green emission from Er-doped Ga2O3 films

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Published in 2017 at "CrystEngComm"

DOI: 10.1039/c7ce00553a

Abstract: This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga2O3 films on sapphire and Si substrates grown via pulsed laser deposition. Temperature insensitive pure green… read more here.

Keywords: pure; pure green; green emission; ga2o3 films ... See more keywords
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Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films

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Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5021867

Abstract: The optical properties and band structure evolution from amorphous to crystalline Ga2O3 films was investigated in this work. Amorphous and crystalline Ga2O3 films were obtained by changing the growth substrate temperatures of pulsed laser deposition… read more here.

Keywords: crystalline ga2o3; amorphous crystalline; ga2o3 films; spectroscopy ... See more keywords
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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

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Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5045601

Abstract: Semi-insulating halide vapor phase epitaxial β-Ga2O3 films without intentional dopants introduced during growth are demonstrated. The sheet resistance measured in the 340–480 K range yielded 268–134 kΩ/◻ and an activation energy of 0.81 eV. Room temperature capacitance-voltage measurements… read more here.

Keywords: halide vapor; vapor phase; ga2o3 films; spectroscopy ... See more keywords
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γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films

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Published in 2021 at "APL Materials"

DOI: 10.1063/5.0038861

Abstract: β-Ga2O3 is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy, we find the thermodynamically unstable γ-phase is a ubiquitous structural defect… read more here.

Keywords: phase inclusions; phase; alxga1 2o3; ga2o3 films ... See more keywords
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Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

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Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0147004

Abstract: β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped… read more here.

Keywords: doped ga2o3; thin films; films grown; ga2o3 films ... See more keywords
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Atomic layer deposition and characterization of Zn-doped Ga2O3 films

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Published in 2021 at "Journal of Vacuum Science and Technology"

DOI: 10.1116/6.0000838

Abstract: The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal… read more here.

Keywords: characterization doped; deposition characterization; atomic layer; deposition ... See more keywords
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Solar-Blind UV Detectors Based on β-Ga2O3 Films

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Published in 2020 at "Semiconductors"

DOI: 10.1134/s1063782620060093

Abstract: Resistive-type structures based on gallium-oxide films are studied. The Ga2O3 films are produced by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with preliminarily deposited platinum electrodes. The data on the… read more here.

Keywords: detectors based; blind detectors; ga2o3 films; solar blind ... See more keywords
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Properties of Resistive Structures Based on Gallium Oxide Polymorphic Phases

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Published in 2020 at "Technical Physics Letters"

DOI: 10.1134/s1063785020090060

Abstract: The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga2O3) films is discussed. Ga2O3 films were deposited by the method of halide… read more here.

Keywords: structures based; properties resistive; ga2o3 films; resistive structures ... See more keywords