High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c06927
Abstract: In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/β, and… read more here.
Keywords: mocvd; self powered; ga2o3 gan; powered ga2o3 ... See more keywords
Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity.
Sign Up to like & getrecommendations! Published in 2022 at "Optics letters"
DOI: 10.1364/ol.454717
Abstract: In this work, we have proposed and fabricated a metal/Ga2O3/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga2O3 makes the Ga2O3 layer fully depleted. The strong… read more here.
Keywords: ga2o3 gan; low dark; ga2o3; metal ga2o3 ... See more keywords