β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
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DOI: 10.1063/5.0044130
Abstract: In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga2O3 periodic fin widths of 1.5/3/5 μm are demonstrated with the incorporation of p-type NiOx. The β-Ga2O3 HJBS diode achieves a… read more here.
Keywords: ga2o3; reverse leakage; leakage current; ga2o3 hetero ... See more keywords